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| 2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4706 900 600 7 14(Pulse28) 7 130(Tc=25C) 150 -55to+150 Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) 2SC4706 100max 100max 600min 10 to 25 0.5max 1.2max 6typ 160typ V MHz pF 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=-1.5A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 Unit A A 19.90.3 V 4.0 a b o3.20.1 V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 35.7 IC (A) 7 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 1.05 IB2 (A) -3.5 ton (s) 1max tstg (s) 5max tf (s) 0.7max 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 14 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) 2 I C/ I B= 5 Const. I C - VBE Temperature Characteristics (Typical) 14 (VCE=4V) 6 1. 12 A 1.2 A 12 Collector Current I C (A) 800mA Collector Current I C (A) 10 10 600mA 8 400m A 8 emp ) mp) e Te (Cas 1 V B E( sat) Cas eT 6 200mA 6 4 4 C ( 25C 125 IB=100mA 2 2 VCE(sat) 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.2 0.4 0.6 0 0 1 2 3 4 0.8 -55C (Case Temp ) 1.0 1.2 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) hFE - IC Temperature Characteristics (Typical) (VCE=4V) 50 8 t on *t stg * tf - I C Characteristics (Typical) ton*t s t g*t f( s) 5 VCC 250V IC:IB1:-I B2= 10:1.5:5 1 t on 0.5 tf t s tg j-a - t Characteristics 125C DC C urrent G ain h FE 25C -55C 10 Sw it ching Time 5 0.02 0.05 0.1 0.5 1 5 10 14 0.1 0.2 0.5 1 Collector Current I C( A) 5 10 14 Collector Current I C( A) Safe Operating Area (Single Pulse) 50 10 Reverse Bias Safe Operating Area 50 130 P c - T a Derating s Ma xim um Powe r Dissipat io n P C( W) 0 10 Collector Cur rent I C( A) Collector Curr ent I C( A) 10 5 100 W ith In fin ite he at si nk 1 0.5 Without Heatsink Natural Cooling 1 0.5 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% 50 0.1 10 50 100 500 1000 0.1 50 100 500 1000 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 117 |
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